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| 2N5400 Discrete POWER & Signal Technologies 2N5400 C BE TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring high voltages. Sourced from Process 74. See 2N5401 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 120 130 5.0 200 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N5400 625 5.0 83.3 200 Units mW mW/C C/W C/W (c) 1997 Fairchild Semiconductor Corporation 2N5400 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current I C = 1.0 mA, IB = 0 I C = 100 A, IE = 0 I E = 10 A, IC = 0 VCB = 100 V, I E = 0 VCB = 100 V, I E = 0, TA = 100 C VEB = 3.0 V, I C = 0 120 130 5.0 100 100 50 V V V nA A nA ON CHARACTERISTICS* hFE DC Current Gain VCE = 5.0 V, IC = 1.0 mA VCE = 5.0 V, IC = 10 mA VCE = 5.0 V, IC = 50 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 30 40 40 180 0.2 0.5 1.0 1.0 V V V V VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Cob fT hfe NF Output Capacitance Current Gain - Bandwidth Product Small-Signal Current Gain Noise Figure VCB = 10 V, f = 1.0 MHz I C = 10 mA, VCE = 10 V, f = 100 MHz I C = 1.0 mA, VCE = 10 V, f = 1.0 kHz VCE = 5.0 V, IC = 250 A, RS = 1.0 k, f = 10 Hz to 15.7 kHz 100 30 6.0 400 200 8.0 V pF *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% |
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